High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor VSN Chava, BG Barker, A Balachandran, A Khan, G Simin, AB Greytak, ... Applied Physics Letters 111 (24), 2017 | 22 | 2017 |
4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth A Balachandran, H Song, TS Sudarshan, MVS Chandrashekhar Journal of Crystal Growth 448, 97-104, 2016 | 20 | 2016 |
Basal plane dislocation free recombination layers on low-doped buffer layer for power devices A Balachandran, TS Sudarshan, MVS Chandrashekhar Crystal Growth & Design 17 (4), 1550-1557, 2017 | 12 | 2017 |
Study of SiC epitaxial growth using tetrafluorosilane and dichlorosilane in vertical hotwall CVD furnace A Balachandran, HZ Song, TS Sudarshan, SS Shetu, ... Materials Science Forum 821, 137-140, 2015 | 9 | 2015 |
High quality low offcut 4h-Sic epitaxy and integrated growth of epitaxial graphene for hybrid graphene/SiC devices A Balachandran University of South Carolina, 2017 | 6 | 2017 |
Elimination of Basal Plane Dislocation and Pinning the Conversion Point Below the Epilayer Interface for SiC Power Device Applications A Balachandran, MVS Chandrashekhar, TS Sudarshan US Patent App. 16/487,287, 2020 | 1 | 2020 |
Voltage tunable solar blindness in tfs grown eg/sic schottky contact bipolar phototransistors VSN Chava, MVS Chandrashekhar, A Balachandran US Patent App. 17/700,983, 2022 | | 2022 |
Voltage tunable solar blindness in TFS grown EG/SiC Schottky contact bipolar phototransistors VSN Chava, MVS Chandrashekhar, A Balachandran US Patent 11,309,449, 2022 | | 2022 |
Voltage tunable solar-blind ultraviolet bipolar junction phototransistor having an epitaxial graphene / sic schottky contact WO Patent WO2019005909A1, 2019 | | 2019 |
PINNING THE CONVERSION POINT BELOW THE EPILAYER INTERFACE FOR SiC POWER DEVICE A BALACHANDRAN, M Chandrashekhar, TS Sudarshan WO Patent WO2018160785A1, 2018 | | 2018 |