Segui
Anusha Balachandran
Anusha Balachandran
University of South Carolina
Email verificata su intel.com
Titolo
Citata da
Citata da
Anno
High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor
VSN Chava, BG Barker, A Balachandran, A Khan, G Simin, AB Greytak, ...
Applied Physics Letters 111 (24), 2017
222017
4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth
A Balachandran, H Song, TS Sudarshan, MVS Chandrashekhar
Journal of Crystal Growth 448, 97-104, 2016
202016
Basal plane dislocation free recombination layers on low-doped buffer layer for power devices
A Balachandran, TS Sudarshan, MVS Chandrashekhar
Crystal Growth & Design 17 (4), 1550-1557, 2017
122017
Study of SiC epitaxial growth using tetrafluorosilane and dichlorosilane in vertical hotwall CVD furnace
A Balachandran, HZ Song, TS Sudarshan, SS Shetu, ...
Materials Science Forum 821, 137-140, 2015
92015
High quality low offcut 4h-Sic epitaxy and integrated growth of epitaxial graphene for hybrid graphene/SiC devices
A Balachandran
University of South Carolina, 2017
62017
Elimination of Basal Plane Dislocation and Pinning the Conversion Point Below the Epilayer Interface for SiC Power Device Applications
A Balachandran, MVS Chandrashekhar, TS Sudarshan
US Patent App. 16/487,287, 2020
12020
Voltage tunable solar blindness in tfs grown eg/sic schottky contact bipolar phototransistors
VSN Chava, MVS Chandrashekhar, A Balachandran
US Patent App. 17/700,983, 2022
2022
Voltage tunable solar blindness in TFS grown EG/SiC Schottky contact bipolar phototransistors
VSN Chava, MVS Chandrashekhar, A Balachandran
US Patent 11,309,449, 2022
2022
Voltage tunable solar-blind ultraviolet bipolar junction phototransistor having an epitaxial graphene / sic schottky contact
WO Patent WO2019005909A1, 2019
2019
PINNING THE CONVERSION POINT BELOW THE EPILAYER INTERFACE FOR SiC POWER DEVICE
A BALACHANDRAN, M Chandrashekhar, TS Sudarshan
WO Patent WO2018160785A1, 2018
2018
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–10