Douglas J Paul
Douglas J Paul
Professor of Semiconductor Devices, EPSRC Quantum Technology Fellow, University of Glasgow
Email verificata su glasgow.ac.uk - Home page
TitoloCitata daAnno
Si/SiGe heterostructures: from material and physics to devices and circuits
DJ Paul
Semiconductor science and technology 19 (10), R75, 2004
6302004
Roadmap for nanoelectronics
R Compano, L Molenkamp, DJ Paul
European Commission IST programme, Future and Emerging Technologies, 2000
2062000
Silicon‐Germanium Strained Layer Materials in Microelectronics
DJ Paul
Advanced Materials 11 (3), 191-204, 1999
1981999
Design and fabrication of memory devices based on nanoscale polyoxometalate clusters
C Busche, L Vilà-Nadal, J Yan, HN Miras, DL Long, VP Georgiev, ...
Nature 515 (7528), 545, 2014
1932014
Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies
SA Lynch, R Bates, DJ Paul, DJ Norris, AG Cullis, Z Ikonic, RW Kelsall, ...
Applied physics letters 81 (9), 1543-1545, 2002
1522002
Mid-infrared plasmon-enhanced spectroscopy with germanium antennas on silicon substrates
L Baldassarre, E Sakat, J Frigerio, A Samarelli, K Gallacher, E Calandrini, ...
Nano letters 15 (11), 7225 - 7231, 2015
1312015
Silicon germanium heterostructures in electronics: the present and the future
DJ Paul
Thin Solid Films 321 (1-2), 172-180, 1998
1231998
Measurement of the Earth tides with a MEMS gravimeter
RP Middlemiss, A Samarelli, DJ Paul, J Hough, S Rowan, GD Hammond
Nature 531 (7596), 614, 2016
1002016
8-band modeling of the quantum confined Stark effect in Ge quantum wells on Si substrates
DJ Paul
Physical Review B 77 (15), 155323, 2008
962008
High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ...
IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003
932003
Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters
R Bates, SA Lynch, DJ Paul, Z Ikonic, RW Kelsall, P Harrison, SL Liew, ...
Applied physics letters 83 (20), 4092-4094, 2003
872003
Ohmic contacts to n-type germanium with low specific contact resistivity
K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley
Applied Physics Letters 100 (2), 022113, 2012
792012
Silicon as a model ion trap: Time domain measurements of donor Rydberg states
NQ Vinh, PT Greenland, K Litvinenko, B Redlich, AFG Van Der Meer, ...
Proceedings of the National Academy of Sciences 105 (31), 10649-10653, 2008
782008
Physics and applications of Terahertz radiation
M Perenzoni, DJ Paul
Springer Netherlands, 2014
712014
The progress towards terahertz quantum cascade lasers on silicon substrates
DJ Paul
Laser & Photonics Reviews 4 (5), 610-632, 2010
642010
Nanofabrication of high aspect ratio (∼ 50: 1) sub-10 nm silicon nanowires using inductively coupled plasma etching
MM Mirza, H Zhou, P Velha, X Li, KE Docherty, A Samarelli, G Ternent, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
612012
Silicon quantum integrated circuits: silicon-germanium heterostructure devices: basics and realisations
E Kasper, DJ Paul
Springer Science & Business Media, 2006
612006
The thermoelectric properties of Ge/SiGe modulation doped superlattices
A Samarelli, L Ferre Llin, S Cecchi, J Frigerio, T Etzelstorfer, E Müller, ...
Journal of applied physics 113 (23), 233704, 2013
572013
Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs
SH Olsen, AG O'Neill, S Chattopadhyay, LS Driscoll, KSK Kwa, DJ Norris, ...
IEEE Transactions on Electron Devices 51 (8), 1245-1253, 2004
532004
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics
J Frigerio, A Ballabio, G Isella, E Sakat, G Pellegrini, P Biagioni, M Bollani, ...
Physical Review B 94 (8), 085202, 2016
522016
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