Chris Wiegand
Chris Wiegand
Email verificata su intel.com
Titolo
Citata da
Citata da
Anno
45nm high-k+ metal gate strain-enhanced transistors
C Auth, A Cappellani, JS Chun, A Dalis, A Davis, T Ghani, G Glass, ...
2008 Symposium on VLSI Technology, 128-129, 2008
4182008
Mechanical properties of Al2O3/polymethylmethacrylate nanocomposites
BJ Ash, DF Rogers, CJ Wiegand, LS Schadler, RW Siegel, ...
Polymer Composites 23 (6), 1014-1025, 2002
2322002
Intrinsic transistor reliability improvements from 22nm tri-gate technology
S Ramey, A Ashutosh, C Auth, J Clifford, M Hattendorf, J Hicks, R James, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 4C. 5.1-4C. 5.5, 2013
1522013
BTI reliability of 45 nm high-K+ metal-gate process technology
S Pae, M Agostinelli, M Brazier, R Chau, G Dewey, T Ghani, M Hattendorf, ...
2008 IEEE International Reliability Physics Symposium, 352-357, 2008
1342008
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
702018
Integrated circuits with selective gate electrode recess
S Mukherjee, CJ Wiegand, TJ Weeks, MY Liu, ML Hattendorf
US Patent 8,896,030, 2014
632014
Inductively coupled hydrogen plasma-assisted Cu ALD on metallic and dielectric surfaces
C Jezewski, WA Lanford, CJ Wiegand, JP Singh, PI Wang, JJ Senkevich, ...
Journal of the Electrochemical Society 152 (2), C60, 2005
552005
Synthesis and characterization of the new fluoropolymer poly (difluorosilylenemethylene); an analogue of poly (vinylidene fluoride)
M Lienhard, I Rushkin, G Verdecia, C Wiegand, T Apple, LV Interrante
Journal of the American Chemical Society 119 (49), 12020-12021, 1997
331997
Molecular caulking: a pore sealing CVD polymer for ultralow k dielectrics
C Jezewski, CJ Wiegand, D Ye, A Mallikarjunan, D Liu, C Jin, WA Lanford, ...
Journal of The Electrochemical Society 151 (7), F157, 2004
322004
Dielectric breakdown in a 45 nm high-k/metal gate process technology
C Prasad, M Agostinelli, C Auth, M Brazier, R Chau, G Dewey, T Ghani, ...
2008 IEEE International Reliability Physics Symposium, 667-668, 2008
252008
Selective Deposition of Ultrathin Poly(p‐xylene) Films on Dielectrics Versus Copper Surfaces
JJ Senkevich, CJ Wiegand, GR Yang, TM Lu
Chemical Vapor Deposition 10 (5), 247-249, 2004
222004
Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures
DB Bergstrom, CJ Wiegand
US Patent App. 16/481,028, 2019
212019
2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications
JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019
182019
Methods of forming a magnetic random access memory etch spacer and structures formed thereby
D Lamborn, O Golonzka, C Wiegand
US Patent 9,318,694, 2016
152016
Non-volatile RRAM embedded into 22FFL FinFET technology
O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ...
2019 Symposium on VLSI Technology, T230-T231, 2019
142019
Bias-temperature stability of ultrathin parylene-capped dielectrics: influence of surface oxygen on copper ion diffusion
JJ Senkevich, PI Wang, CJ Wiegand, TM Lu
Applied physics letters 84 (14), 2617-2619, 2004
142004
Hindered copper ion penetration in Parylene-N films
A Mallikarjunan, C Wiegand, JJ Senkevich, GR Yang, E Williams, TM Lu
Electrochemical and Solid State Letters 6 (8), F28, 2003
142003
Area scaling on trigate transistors
AJ Pethe, JS Sandford, CJ Wiegand, RD James
US Patent App. 13/487,111, 2013
122013
Effective pore sealing of ultralow-k dielectrics
C Jezewski, WA LANFORD, CJ WIEGAND, JJ Senkevich, TM LU
Semiconductor international 27 (5), 56-59, 2004
102004
Correlation between bond cleavage in parylene N and the degradation of its dielectric properties
JJ Senkevich, A Mallikarjunan, CJ Wiegand, TM Lu, HN Bani-Salameh, ...
Electrochemical and Solid State Letters 7 (4), G56, 2004
92004
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
Articoli 1–20