Nelson Rowell
Nelson Rowell
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Well-resolved band-edge photoluminescence of excitons confined in strained quantum wells
JC Sturm, H Manoharan, LC Lenchyshyn, MLW Thewalt, NL Rowell, ...
Physical review letters 66 (10), 1362, 1991
Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys
JP Nol, NL Rowell, DC Houghton, DD Perovic
Applied physics letters 57 (10), 1037-1039, 1990
Ge dots and nanostructures grown epitaxially on Si
JM Baribeau, X Wu, NL Rowell, DJ Lockwood
Journal of Physics: Condensed Matter 18 (8), R139, 2006
Normal acoustic modes and Brillouin scattering in single-mode optical fibers
PJ Thomas, NL Rowell, HM Van Driel, GI Stegeman
Physical review B 19 (10), 4986, 1979
Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy
DJ Lockwood, G Yu, NL Rowell
Solid State Communications 136 (7), 404-409, 2005
High quantum efficiency photoluminescence from localized excitons in Si1−xGex
LC Lenchyshyn, MLW Thewalt, JC Sturm, PV Schwartz, EJ Prinz, ...
Applied physics letters 60 (25), 3174-3176, 1992
Luminescence origins in molecular beam epitaxial Si1−xGex
JP Nol, NL Rowell, DC Houghton, A Wang, DD Perovic
Applied physics letters 61 (6), 690-692, 1992
Recombination processes in erbium-doped MBE silicon
H Efeoglu, JH Evans, TE Jackman, B Hamilton, DC Houghton, JM Langer, ...
Semiconductor Science and Technology 8, 236, 1993
Theory of Brillouin scattering from opaque media
NL Rowell, GI Stegeman
Physical Review B 18 (6), 2598, 1978
Type I Band Alignment in Si 1− x Ge x/S i (001) Quantum Wells: Photoluminescence under Applied [110] and [100] Uniaxial Stress
DC Houghton, GC Aers, SRE Yang, E Wang, NL Rowell
Physical review letters 75 (5), 866, 1995
Electroluminescence and photoluminescence from Si1−xGex alloys
NL Rowell, JP Nol, DC Houghton, M Buchanan
Applied physics letters 58 (9), 957-958, 1991
On the gun independence and phosphor constancy of colour video monitors
WB Cowan
Color Res. Appl. 11, 33-38, 1986
Exciton luminescence in Si1−xGex/Si heterostructures grown by molecular beam epitaxy
NL Rowell, JP Nol, DC Houghton, A Wang, LC Lenchyshyn, ...
Journal of applied physics 74 (4), 2790-2805, 1993
Photoluminescence studies of Si (100) doped with low‐energy (≤1000 eV) As+ ions during molecular beam epitaxy
JP Nol, JE Greene, NL Rowell, S Kechang, DC Houghton
Applied physics letters 55 (15), 1525-1527, 1989
Photoluminescence mechanisms in thin quantum wells
LC Lenchyshyn, MLW Thewalt, DC Houghton, JP Nol, NL Rowell, ...
Physical Review B 47 (24), 16655, 1993
A novel approach to the synthesis of photoluminescent germanium nanoparticles by reactive laser ablation
D Riabinina, C Durand, M Chaker, N Rowell, F Rosei
Nanotechnology 17 (9), 2152, 2006
Fourier-transform infrared and photoluminescence spectroscopies of self-assembled monolayers of long-chain thiols on (001) GaAs
X Ding, K Moumanis, JJ Dubowski, L Tay, NL Rowell
Journal of applied physics 99 (5), 054701, 2006
Brillouin scattering from surface phonons in thin films
NL Rowell, GI Stegeman
Physical Review Letters 41 (14), 970, 1978
Growth and characterization of Si Ge atomic layer superlattices
JM Baribeau, DJ Lockwood, MW Lockwood, MWC Dharma-Wardana, ...
Thin Solid Films 183 (1-2), 17-24, 1989
Suppression of interfacial reaction for on silicon by pre- plasma treatment
CS Lai, WC Wu, TS Chao, JH Chen, JC Wang, LL Tay, N Rowell
Applied physics letters 89 (7), 072904, 2006
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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