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Agostino Pirovano
Agostino Pirovano
Email verificata su micron.com
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Electronic switching in phase-change memories
A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, R Bez
IEEE Transactions on Electron Devices 51 (3), 452-459, 2004
7582004
Novel/spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
F Pellizzer, A Pirovano, F Ottogalli, M Magistretti, M Scaravaggi, P Zuliani, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 18-19, 2004
5482004
Reliability study of phase-change nonvolatile memories
A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004
5052004
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
A Pirovano, AL Lacaita, F Pellizzer, SA Kostylev, A Benvenuti, R Bez
IEEE Transactions on Electron Devices 51 (5), 714-719, 2004
4462004
Electronic switching effect and phase-change transition in chalcogenide materials
A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez
IEEE Electron Device Letters 25 (10), 684-686, 2004
3622004
Scaling analysis of phase-change memory technology
A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez
IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003
3502003
Electrothermal and phase-change dynamics in chalcogenide-based memories
AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004…, 2004
3342004
Non-volatile memory technologies: emerging concepts and new materials
R Bez, A Pirovano
Materials Science in Semiconductor Processing 7 (4-6), 349-355, 2004
3102004
Threshold switching and phase transition numerical models for phase change memory simulations
A Redaelli, A Pirovano, A Benvenuti, AL Lacaita
Journal of Applied Physics 103 (11), 2008
2682008
Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses
S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ...
Frontiers in neuroscience 10, 56, 2016
2382016
4-Mb MOSFET-selected phase-change memory experimental chip
F Bedeschi, R Bez, C Boffino, E Bonizzoni, E Buda, G Casagrande, ...
Proceedings of the 30th European Solid-State Circuits Conference, 207-210, 2004
2372004
An 8Mb demonstrator for high-density 1.8 V phase-change memories
F Bedeschi, C Resta, O Khouri, E Buda, L Costa, M Ferraro, F Pellizzer, ...
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No…, 2004
2002004
A 90nm phase change memory technology for stand-alone non-volatile memory applications
F Pellizzer, A Benvenuti, B Gleixner, Y Kim, B Johnson, M Magistretti, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 122-123, 2006
1762006
4-Mb MOSFET-selected/spl mu/trench phase-change memory experimental chip
F Bedeschi, R Bez, C Boffino, E Bonizzoni, EC Buda, G Casagrande, ...
IEEE journal of solid-state circuits 40 (7), 1557-1565, 2005
1462005
Analysis of phase distribution in phase-change nonvolatile memories
D Ielmini, AL Lacaita, A Pirovano, F Pellizzer, R Bez
IEEE Electron Device Letters 25 (7), 507-509, 2004
1442004
Amorphization dynamics of Ge2Sb2Te5 films upon nano-and femtosecond laser pulse irradiation
J Siegel, W Gawelda, D Puerto, C Dorronsoro, J Solis, CN Afonso, ...
Journal of Applied Physics 103 (2), 2008
1142008
Statistics of resistance drift due to structural relaxation in phase-change memory arrays
M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano
IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010
1062010
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5
M Boniardi, A Redaelli, A Pirovano, I Tortorelli, D Ielmini, F Pellizzer
Journal of Applied Physics 105 (8), 2009
982009
Crystallization and phase separation in thin films
S Privitera, E Rimini, C Bongiorno, R Zonca, A Pirovano, R Bez
Journal of applied physics 94 (7), 4409-4413, 2003
932003
Method for multilevel programming of phase change memory cells using a percolation algorithm
F Pellizzer, A Pirovano
US Patent 7,639,526, 2009
892009
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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