| Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ... IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016 | 140 | 2016 |
| Temperature-Dependent Dynamic in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage M Meneghini, P Vanmeerbeek, R Silvestri, S Dalcanale, A Banerjee, ... IEEE transactions on electron devices 62 (3), 782-787, 2015 | 125 | 2015 |
| Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs I Rossetto, M Meneghini, A Tajalli, S Dalcanale, C De Santi, P Moens, ... IEEE transactions on electron devices 64 (9), 3734-3739, 2017 | 117 | 2017 |
| Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs M Singh, MA Casbon, MJ Uren, JW Pomeroy, S Dalcanale, S Karboyan, ... IEEE Electron Device Letters 39 (10), 1572-1575, 2018 | 75 | 2018 |
| Raman Thermography of Peak Channel Temperature in -Ga2O3 MOSFETs JW Pomeroy, C Middleton, M Singh, S Dalcanale, MJ Uren, MH Wong, ... IEEE Electron Device Letters 40 (2), 189-192, 2018 | 67 | 2018 |
| Leakage mechanisms in GaN-on-GaN vertical pn diodes B Rackauskas, S Dalcanale, MJ Uren, T Kachi, M Kuball Applied Physics Letters 112 (23), 2018 | 54 | 2018 |
| Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure M Meneghini, O Hilt, C Fleury, R Silvestri, M Capriotti, G Strasser, ... Microelectronics Reliability 58, 177-184, 2016 | 32 | 2016 |
| Self-Heating Characterization of -Ga2O3 Thin-Channel MOSFETs by Pulsed – and Raman Nanothermography NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ... IEEE Transactions on Electron Devices 67 (1), 204-211, 2019 | 29 | 2019 |
| The impact of hot electrons and self-heating during hard-switching in AlGaN/GaN HEMTs F Yang, S Dalcanale, M Gajda, S Karboyan, MJ Uren, M Kuball IEEE Transactions on Electron Devices 67 (3), 869-874, 2020 | 26 | 2020 |
| Proton induced trapping effect on space compatible GaN HEMTs A Stocco, S Gerardin, D Bisi, S Dalcanale, F Rampazzo, M Meneghini, ... Microelectronics Reliability 54 (9-10), 2213-2216, 2014 | 26 | 2014 |
| Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: An industry perspective P Moens, A Banerjee, A Constant, P Coppens, M Caesar, Z Li, ... ECS Transactions 72 (4), 65, 2016 | 24 | 2016 |
| GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift S Dalcanale, M Meneghini, A Tajalli, I Rossetto, M Ruzzarin, E Zanoni, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 4B-1.1-4B-1.5, 2017 | 18 | 2017 |
| Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress I Rossetto, M Meneghini, R Silvestři, S Dalcanale, E Zanoni, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 16 | 2016 |
| Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes T Moule, S Dalcanale, AS Kumar, MJ Uren, W Li, K Nomoto, D Jena, ... IEEE Transactions on Electron Devices 69 (1), 75-81, 2021 | 13 | 2021 |
| Thermal transport in superlattice castellated field effect transistors C Middleton, S Dalcanale, JW Pomeroy, MJ Uren, J Chang, J Parke, ... IEEE Electron Device Letters 40 (9), 1374-1377, 2019 | 11 | 2019 |
| Reliability of Gallium Nitride microwave transistors E Zanoni, G Meneghesso, M Meneghini, A Stocco, S Dalcanale, ... 2016 21st International Conference on Microwave, Radar and Wireless …, 2016 | 11 | 2016 |
| Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation F Yang, MJ Uren, M Gajda, S Dalcanale, S Karboyan, JW Pomeroy, ... Semiconductor Science and Technology 36 (9), 095024, 2021 | 9 | 2021 |
| Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors M Meneghini, R Silvestri, S Dalcanale, D Bisi, E Zanoni, G Meneghesso, ... 2015 IEEE International Reliability Physics Symposium, 2E. 2.1-2E. 2.6, 2015 | 8 | 2015 |
| Noise analysis of the leakage current in time-dependent dielectric breakdown in a GaN SLCFET S Dalcanale, MJ Uren, J Chang, K Nagamatsu, JA Parke, RS Howell, ... IEEE Transactions on Electron Devices 68 (5), 2220-2225, 2021 | 5 | 2021 |
| Simulation of Leakage Induced Suppression of Bulk Dynamic R ON in Power Switching GaN-on-Si HEMTs MJ Uren, S Dalcanale, F Yang, A Nejim, SP Wilson, M Kuball | 2 | 2020 |
