LOPEZ-LOPEZ M
Titolo
Citata da
Citata da
Anno
GaAs surface oxide desorption by annealing in ultra high vacuum
A Guillén-Cervantes, Z Rivera-Alvarez, M López-López, E López-Luna, ...
Thin Solid Films 373 (1-2), 159-163, 2000
792000
Surface diffusion length of Ga adatoms in molecular-beam epitaxy on GaAs (100)–(110) facet structures
M López, Y Nomura
Journal of crystal growth 150, 68-72, 1995
681995
Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates
M Lopez-Lopez, A Guillen-Cervantes, Z Rivera-Alvarez, ...
Journal of crystal growth 193 (4), 528-534, 1998
541998
Characterization of the “clean-up” of the oxidized Ge (100) surface by atomic layer deposition
M Milojevic, R Contreras-Guerrero, M Lopez-Lopez, J Kim, RM Wallace
Applied Physics Letters 95 (21), 212902, 2009
532009
Molecular beam epitaxy of GaAs/AlAs on mesa stripes along the [001] direction for quantum-wire fabrication
M López, T Ishikawa, Y Nomura
Japanese journal of applied physics 32 (8A), L1051, 1993
441993
Photoluminescence study of gallium nitride thin films obtained by infrared close space vapor transport
G Santana, O De Melo, J Aguilar-Hernández, R Mendoza-Pérez, ...
Materials 6 (3), 1050-1060, 2013
342013
Structural, optical and electrical characteristics of yttrium oxide films deposited by laser ablation
JJ Araiza, M Cardenas, C Falcony, VH Mendez-Garcia, M Lopez, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (6 …, 1998
311998
Realization of mirror surface in (111)-and (110)-oriented GaAs by migration-enhanced epitaxy
Y Takano, M Lopez, T Torihata, T Ikei, Y Kanaya, K Pak, H Yonezu
Journal of crystal growth 111 (1-4), 216-220, 1991
251991
Dislocation densities in MBE grown ZnSe epitaxial layers on GaAs by HRXRD
ME Constantino, MA Vidal, B Salazar-Hernández, H Navarro-Contreras, ...
Journal of crystal growth 194 (3-4), 301-308, 1998
221998
Precession electron diffraction‐assisted crystal phase mapping of metastable c‐GaN films grown on (001) GaAs
F Ruiz‐Zepeda, YL Casallas‐Moreno, J Cantu‐Valle, D Alducin, ...
Microscopy research and technique 77 (12), 980-985, 2014
212014
Initial growth mechanism of GaAs on Si (110)
M López, T Ikei, Y Takano, K Pak, H Yonezu
Japanese journal of applied physics 29 (3R), 551, 1990
211990
Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers
J Luyo-Alvarado, M Meléndez-Lira, M Lopez-Lopez, ...
Journal of applied physics 84 (3), 1551-1557, 1998
191998
Molecular-beam epitaxial growth of pyramidal structures on patterned GaAs [100] substrates for three-dimensionally confined structures
M Lopez, T Ishikawa, Y Nomura
Electronics Letters 29 (25), 2225-2227, 1993
191993
AlGaAs/GaAs wire and box structures prepared by molecular‐beam epitaxial regrowth on in situ patterned GaAs substrates
M López, N Tanaka, I Matsuyama, T Ishikawa
Applied physics letters 68 (5), 658-660, 1996
181996
Study of the structural and optical properties of GaPN thin films grown by magnetron RF sputtering
A Pulzara-Mora, M Meléndez-Lira, S Jiménez-Sandoval, M Lopez-Lopez
Vacuum 80 (5), 468-474, 2006
172006
Molecular beam epitaxial growth of CdTe layers on InSb (111) A and B polar substrates
J Huerta-Ruelas, M Lopez-Lopez, O Zelaya-Angel
Japanese Journal of Applied Physics 39 (4R), 1701, 2000
162000
Effect of deposition temperature on polymorphous silicon thin films by PECVD: role of hydrogen
L Hamui, BM Monroy, KH Kim, A López-Suárez, J Santoyo-Salazar, ...
Materials Science in Semiconductor Processing 41, 390-397, 2016
152016
Photoreflectance study of the substrate-film interface of GaAs homoepitaxial structures with different in situ substrate surface cleaning processes
M López-López, M Meléndez-Lira, S Goto
Applied physics letters 71 (3), 338-340, 1997
151997
Etching temperature dependence of the surface composition and reconstruction for Cl2‐etched GaAs layers
N Tanaka, M Lopez, I Matsuyama, T Ishikawa
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
151995
Initial growth process of GaAs on Ge substrate and pseudomorphic Si interlayer
T Kawai, H Yonezu, Y Yamauchi, M Lopez, K Pak, W Kürner
Journal of crystal growth 127 (1-4), 107-111, 1993
151993
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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