Ion implantation in silicon technology L Rubin, J Poate
Industrial Physicist 9 (3), 12-15, 2003
99 2003 Phase stability limits of Bi2 Sr2 Ca1 Cu2 O8+δ and Bi2 Sr2 Ca2 Cu3 O10+δ LM Rubin, TP Orlando, JB Vander Sande, G Gorman, R Savoy, R Swope, ...
Applied physics letters 61 (16), 1977-1979, 1992
95 1992 Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by KS Jones, K Moller, J Chen, M Puga-Lambers, B Freer, J Berstein, ...
Journal of applied physics 81 (9), 6051-6055, 1997
70 1997 Diffusion of ion implanted boron in preamorphized silicon KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ...
Applied physics letters 68 (19), 2672-2674, 1996
63 1996 Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon LS Robertson, KS Jones, LM Rubin, J Jackson
Journal of Applied Physics 87 (6), 2910-2913, 2000
50 2000 The effect of boron implant energy on transient enhanced diffusion in silicon J Liu, V Krishnamoorthy, HJ Gossman, L Rubin, ME Law, KS Jones
Journal of applied physics 81 (4), 1656-1660, 1997
49 1997 Phase stability limits and solid-state decomposition of Bi2Sr2CaCu2O8+ δ and Bi2Sr2Ca2Cu3O10+ δ in reduced oxygen pressures LM Rubin, TP Orlando, JB Vander Sande, G Gorman, R Savoy, R Swope, ...
Physica C: Superconductivity 217 (1-2), 227-234, 1993
43 1993 On the FinFET extension implant energy HJL Gossmann, A Agarwal, T Parrill, LM Rubin, JM Poate
IEEE transactions on nanotechnology 2 (4), 285-290, 2003
33 2003 Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing L Rubin, D Hoffman, D Ma, N Herbots
IEEE transactions on electron devices 37 (1), 183-190, 1990
33 1990 Superior latch-up resistance of high dose, high energy implanted p/sup+/buried layers KC Leong, PC Liu, W Morris, L Rubin, CH Gan, L Chan
1998 International Conference on Ion Implantation Technology. Proceedings …, 1998
31 1998 The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon LS Robertson, A Lilak, ME Law, KS Jones, PS Kringhoj, LM Rubin, ...
Applied physics letters 71 (21), 3105-3107, 1997
29 1997 Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon LS Robertson, ME Law, KS Jones, LM Rubin, J Jackson, P Chi, ...
Applied Physics Letters 75 (24), 3844-3846, 1999
27 1999 Transient enhanced diffusion and defect microstructure in high dose, low energy V Krishnamoorthy, K Moller, KS Jones, D Venables, J Jackson, L Rubin
Journal of applied physics 84 (11), 5997-6002, 1998
26 1998 The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe … S Voldman, L Lanzerotti, W Morris, L Rubin
2004 IEEE International Reliability Physics Symposium. Proceedings, 143-151, 2004
25 2004 Process control issues for retrograde well implants for narrow n+/p+ isolation in CMOS LM Rubin, W Morris, C Jasper
Ion Implantation Technology. 2002. Proceedings of the 14th International …, 2002
22 2002 Effective gettering of oxygen by high dose, high energy boron buried layers L Rubin, R Pech, D Huber, J Brunner, W Morris
1998 International Conference on Ion Implantation Technology. Proceedings …, 1998
22 1998 High-energy ion implanters and applications take off L Rubin, W Morris
Semiconductor international 20 (4), 77-88, 1997
22 1997 Evaluation of high dose, high energy boron implantation into Cz substrates for epi-replacement in CMOS technology KK Bourdelle, Y Chen, RA Ashton, LM Rubin, A Agarwal, WH Morris
IEEE Transactions on Electron Devices 48 (9), 2043-2049, 2001
17 2001 Rutherford backscattering detection for use in Ion implantation LM Rubin, SD Wilson, Y Erokhin
US Patent 6,255,662, 2001
14 2001 Buried layer/connecting layer high energy implantation for improved CMOS latch-up W Morris, L Rubin, D Wristers
Proceedings of 11th International Conference on Ion Implantation Technology …, 1996
14 1996 