Chamseddine Bouhafs
Titolo
Citata da
Citata da
Anno
Morphological and electronic properties of epitaxial graphene on SiC
R Yakimova, T Iakimov, GR Yazdi, C Bouhafs, J Eriksson, A Zakharov, ...
Physica B: Condensed Matter 439, 54-59, 2014
392014
Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
C Bouhafs, AA Zakharov, IG Ivanov, F Giannazzo, J Eriksson, V Stanishev, ...
Carbon 116, 722-732, 2017
212017
In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
S Knight, T Hofmann, C Bouhafs, N Armakavicius, P Kühne, V Stanishev, ...
Scientific reports 7 (1), 1-8, 2017
192017
Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC (000-1)
C Bouhafs, V Darakchieva, IL Persson, A Tiberj, POÅ Persson, M Paillet, ...
Journal of Applied Physics 117 (8), 085701, 2015
192015
Effect of nitrogen on the dielectric function from the near-infrared to the ultraviolet
N Ben Sedrine, C Bouhafs, JC Harmand, R Chtourou, V Darakchieva
Applied Physics Letters 97 (20), 201903, 2010
182010
Decoupling and ordering of multilayer graphene on C-face 3C-SiC (111)
C Bouhafs, V Stanishev, AA Zakharov, T Hofmann, P Kühne, T Iakimov, ...
Applied Physics Letters 109 (20), 203102, 2016
122016
Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
N Armakavicius, C Bouhafs, V Stanishev, P Kühne, R Yakimova, S Knight, ...
Applied Surface Science 421, 357-360, 2017
112017
Structural and Electronic Properties of Graphene on 4H-and 3C-SiC
C Bouhafs
Linköping University Electronic Press, 2016
42016
Optical properties of GaAs0. 9-xNxSb0. 1 alloy films studied by spectroscopic ellipsometry
NB Sedrine, C Bouhafs, M Schubert, JC Harmand, R Chtourou, ...
Thin Solid Films 519 (9), 2838-2842, 2011
42011
Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
N Armakavicius, P Kühne, J Eriksson, C Bouhafs, V Stanishev, IG Ivanov, ...
Carbon 172, 248-259, 2021
22021
Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC
I Persson, N Armakavicius, C Bouhafs, V Stanishev, P Kühne, T Hofmann, ...
APL Materials 8 (1), 011104, 2020
22020
Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper
C Bouhafs, S Pezzini, FR Geisenhof, N Mishra, V Mišeikis, Y Niu, ...
Carbon 177, 282-290, 2021
12021
Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation
V Stanishev, N Armakavicius, C Bouhafs, C Coletti, P Kühne, IG Ivanov, ...
Applied Sciences 11 (4), 1891, 2021
12021
Stacking Relations and Substrate Interaction of Graphene on Copper Foil
P Schädlich, F Speck, C Bouhafs, N Mishra, S Forti, C Coletti, T Seyller
Advanced Materials Interfaces, 2002025, 2021
2021
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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