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Kos Galatsis Ph.D.
Kos Galatsis Ph.D.
President of Forensics Detectors
Verified email at forensicsdetectors.com - Homepage
Title
Cited by
Cited by
Year
Synthesis of nanometre-thick MoO 3 sheets
K Kalantar-Zadeh, J Tang, M Wang, KL Wang, A Shailos, K Galatsis, ...
Nanoscale 2 (3), 429-433, 2010
3122010
A stacked memory device on logic 3D technology for ultra-high-density data storage
J Kim, AJ Hong, SM Kim, KS Shin, EB Song, Y Hwang, F Xiu, K Galatsis, ...
Nanotechnology 22 (25), 254006, 2011
2952011
Comparison of single and binary oxide MoO3, TiO2 and WO3 sol–gel gas sensors
K Galatsis, YX Li, W Wlodarski, E Comini, G Sberveglieri, C Cantalini, ...
Sensors and Actuators B: Chemical 83 (1-3), 276-280, 2002
2532002
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 2011
2442011
Fully printed separated carbon nanotube thin film transistor circuits and its application in organic light emitting diode control
P Chen, Y Fu, R Aminirad, C Wang, J Zhang, K Wang, K Galatsis, C Zhou
Nano letters 11 (12), 5301-5308, 2011
2382011
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 2011
2282011
Investigation of the oxygen gas sensing performance of Ga2O3 thin films with different dopants
Y Li, A Trinchi, W Wlodarski, K Galatsis, K Kalantar-Zadeh
Sensors and Actuators B: Chemical 93 (1-3), 431-434, 2003
2052003
Gas sensing properties of p-type semiconducting Cr-doped TiO2 thin films
Y Li, W Wlodarski, K Galatsis, SH Moslih, J Cole, S Russo, N Rockelmann
Sensors and Actuators B: Chemical 83 (1-3), 160-163, 2002
2052002
p-and n-type Fe-doped SnO2 gas sensors fabricated by the mechanochemical processing technique
K Galatsis, L Cukrov, W Wlodarski, P McCormick, K Kalantar-Zadeh, ...
Sensors and actuators B: chemical 93 (1-3), 562-565, 2003
1782003
Sol–gel prepared MoO3–WO3 thin-films for O2 gas sensing
K Galatsis, YX Li, W Wlodarski, K Kalantar-Zadeh
Sensors and Actuators B: Chemical 77 (1-2), 478-483, 2001
1682001
Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing
I Sanchez Esqueda, X Yan, C Rutherglen, A Kane, T Cain, P Marsh, Q Liu, ...
ACS nano 12 (7), 7352-7361, 2018
1582018
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
1582012
Patterning and templating for nanoelectronics
K Galatsis, KL Wang, M Ozkan, CS Ozkan, Y Huang, JP Chang, ...
Advanced Materials 22 (6), 769-778, 2010
1572010
Semiconductor MoO3–TiO2 thin film gas sensors
K Galatsis, YX Li, W Wlodarski, E Comini, G Faglia, G Sberveglieri
Sensors and Actuators B: Chemical 77 (1-2), 472-477, 2001
1452001
Gas sensing properties of nanosized tin oxide synthesised by mechanochemical processing
LM Cukrov, PG McCormick, K Galatsis, W Wlodarski
Sensors and Actuators B: Chemical 77 (1-2), 491-495, 2001
1372001
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 2011
1142011
Voltage-induced switching of nanoscale magnetic tunnel junctions
JG Alzate, PK Amiri, P Upadhyaya, SS Cherepov, J Zhu, M Lewis, ...
2012 International Electron Devices Meeting, 29.5. 1-29.5. 4, 2012
1132012
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy
H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ...
Journal of Physics D: Applied Physics 45 (2), 025001, 2011
932011
Novel Love mode surface acoustic wave based immunosensors
K Kalantar-Zadeh, W Wlodarski, YY Chen, BN Fry, K Galatsis
Sensors and Actuators B: Chemical 91 (1-3), 143-147, 2003
932003
Highly sensitive layered ZnO/LiNbO3 SAW device with InOx selective layer for NO2 and H2 gas sensing
SJ Ippolito, S Kandasamy, K Kalantar-Zadeh, W Wlodarski, K Galatsis, ...
Sensors and Actuators B: Chemical 111, 207-212, 2005
912005
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