| Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ... Applied Physics Letters 98 (18), 183508, 2011 | 177 | 2011 |
| Effects of multi-layer graphene capping on Cu interconnects CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ... Nanotechnology 24 (11), 115707, 2013 | 96 | 2013 |
| Quantitative analysis of hysteretic reactions at the interface of graphene and SiO 2 using the short pulse I–V method YG Lee, CG Kang, C Cho, Y Kim, HJ Hwang, BH Lee Carbon 60, 453-460, 2013 | 65 | 2013 |
| Mechanism of the effects of low temperature Al 2 O 3 passivation on graphene field effect transistors CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee Carbon 53, 182-187, 2013 | 62 | 2013 |
| Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ... Nanotechnology 24 (47), 475501, 2013 | 52 | 2013 |
| Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ... Nanotechnology 22 (29), 295201, 2011 | 45 | 2011 |
| Graphene transfer in vacuum yielding a high quality graphene S Lee, SK Lee, CG Kang, C Cho, YG Lee, U Jung, BH Lee Carbon 93, 286-294, 2015 | 42 | 2015 |
| Ferroelectric polymer-gated graphene memory with high speed conductivity modulation HJ Hwang, JH Yang, YG Lee, C Cho, CG Kang, SC Kang, W Park, ... Nanotechnology 24 (17), 175202, 2013 | 41 | 2013 |
| Intrinsic photocurrent characteristics of graphene photodetectors passivated with Al 2 O 3 CG Kang, SK Lee, S Choe, YG Lee, CL Lee, BH Lee Optics express 21 (20), 23391-23400, 2013 | 37 | 2013 |
| A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From – , – , and – Measurements A Padovani, B Kaczer, M Pešić, A Belmonte, M Popovici, L Nyns, D Linten, ... IEEE Transactions on Electron Devices 66 (4), 1892-1898, 2019 | 34 | 2019 |
| A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors YJ Kim, YG Lee, U Jung, S Lee, SK Lee, BH Lee Nanoscale 7 (9), 4013-4019, 2015 | 32 | 2015 |
| Electrodeposition of the Sn-58 wt.% Bi layer for low-temperature soldering YG Lee, JG Park, CW Lee, JP Jung Metals and Materials International 17 (1), 117-121, 2011 | 29 | 2011 |
| Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ... Electron Device Letters, IEEE 32 (11), 1591-1593, 2011 | 28 | 2011 |
| Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ... Carbon 68, 791-797, 2014 | 27 | 2014 |
| Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors YG Lee, YJ Kim, CG Kang, C Cho, S Lee, HJ Hwang, U Jung, BH Lee Applied Physics Letters 102 (9), 093121, 2013 | 25 | 2013 |
| A study of the leakage current in TiN/HfO 2/TiN capacitors S Cimino, A Padovani, L Larcher, VV Afanas’ev, HJ Hwang, YG Lee, ... Microelectronic Engineering 95, 71-73, 2012 | 24 | 2012 |
| Quantitatively estimating defects in graphene devices using discharge current analysis method U Jung, YG Lee, CG Kang, S Lee, JJ Kim, HJ Hwang, SK Lim, MH Ham, ... Scientific reports 4, 2014 | 21 | 2014 |
| Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys JJ Kim, M Kim, U Jung, KE Chang, S Lee, Y Kim, YG Lee, R Choi, BH Lee Electron Devices, IEEE Transactions on 60 (11), 3683-3689, 2013 | 20 | 2013 |
| Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices SK Lee, CG Kang, YG Lee, C Cho, E Park, HJ Chung, S Seo, HD Lee, ... Carbon 50 (11), 4046-4051, 2012 | 19 | 2012 |
| Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs JJ Kim, M Cho, L Pantisano, U Jung, YG Lee, T Chiarella, M Togo, ... Electron Device Letters, IEEE 33 (7), 937-939, 2012 | 19 | 2012 |
Hyeon Jun HwangPohang University of Science and TechnologyVerified email at postech.ac.kr
