Etienne Janod
Etienne Janod
Institut des Materiaux Jean Rouxel
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Citata da
Citata da
Coherent long-range magnetic bound states in a superconductor
GC Ménard, S Guissart, C Brun, S Pons, VS Stolyarov, F Debontridder, ...
Nature Physics 11 (12), 1013-1016, 2015
Electric‐Field‐Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
L Cario, C Vaju, B Corraze, V Guiot, E Janod
Advanced Materials 22 (45), 5193-5197, 2010
Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators
P Stoliar, L Cario, E Janod, B Corraze, C Guillot-Deudon, ...
Advanced Materials 25, 3222, 2013
Avalanche breakdown in GaTa 4 Se 8− x Te x narrow-gap Mott insulators
V Guiot, L Cario, E Janod, B Corraze, VT Phuoc, M Rozenberg, P Stoliar, ...
Nature communications 4 (1), 1-6, 2013
A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator
P Stoliar, J Tranchant, B Corraze, E Janod, MP Besland, F Tesler, ...
Advanced Functional Materials 27 (11), 1604740, 2017
Structure and Magnetic Properties of Oxychalcogenides A2F2Fe2OQ2 (A = Sr, Ba; Q = S, Se) with Fe2O Square Planar Layers Representing an …
H Kabbour, E Janod, B Corraze, M Danot, C Lee, MH Whangbo, L Cario
Journal of the American Chemical Society 130 (26), 8261-8270, 2008
Resistive switching in Mott insulators and correlated systems
E Janod, J Tranchant, B Corraze, M Querré, P Stoliar, M Rozenberg, ...
Advanced Functional Materials 25 (40), 6287-6305, 2015
Electric‐Pulse‐driven Electronic Phase Separation, Insulator–Metal Transition, and Possible Superconductivity in a Mott Insulator
C Vaju, L Cario, B Corraze, E Janod, V Dubost, T Cren, D Roditchev, ...
Advanced Materials 20 (14), 2760-2765, 2008
Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8
V Dubost, T Cren, C Vaju, L Cario, B Corraze, E Janod, F Debontridder, ...
Nano letters 13 (8), 3648-3653, 2013
First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System
A Camjayi, C Acha, R Weht, MG Rodríguez, B Corraze, E Janod, L Cario, ...
Physical review letters 113 (8), 086404, 2014
Optical Conductivity Measurements of Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition
VT Phuoc, C Vaju, B Corraze, R Sopracase, A Perucchi, C Marini, ...
Physical review letters 110 (3), 037401, 2013
Reversible magnetization below Tc in high-quality superconducting ceramics
G Triscone, AF Khoder, C Opagiste, JY Genoud, T Graf, E Junod, ...
Physica C: Superconductivity 224 (3-4), 263-276, 1994
Orbital-ordering-driven multiferroicity and magnetoelectric coupling in GeV 4 S 8
K Singh, C Simon, E Cannuccia, MB Lepetit, B Corraze, E Janod, L Cario
Physical review letters 113 (13), 137602, 2014
Nonthermal and purely electronic resistive switching in a Mott memory
P Stoliar, M Rozenberg, E Janod, B Corraze, J Tranchant, L Cario
Physical Review B 90 (4), 045146, 2014
Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8
E Dorolti, L Cario, B Corraze, E Janod, C Vaju, HJ Koo, E Kan, ...
Journal of the American Chemical Society 132 (16), 5704-5710, 2010
Ultrafast Formation of a Charge Density Wave State in : Observation at Nanometer Scales Using Time-Resolved X-Ray Diffraction
C Laulhé, T Huber, G Lantz, A Ferrer, SO Mariager, S Grübel, J Rittmann, ...
Physical review letters 118 (24), 247401, 2017
Incommensurate spin correlation driven by frustration in BiCu 2 PO 6
O Mentré, E Janod, P Rabu, M Hennion, F Leclercq-Hugeux, J Kang, ...
Physical Review B 80 (18), 180413, 2009
Crystal structure and charge order below the metal–insulator transition in the vanadium bronze β-SrV6O15
C Sellier, F Boucher, E Janod
Solid State Sciences 5 (4), 591-599, 2003
Large magnetic entropy in giant magnetoresistive amorphous gadolinium silicon
BL Zink, E Janod, K Allen, F Hellman
Physical review letters 83 (11), 2266, 1999
Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8
C Vaju, L Cario, B Corraze, E Janod, V Dubost, T Cren, D Roditchev, ...
Microelectronic Engineering 85 (12), 2430-2433, 2008
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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