| Reduction mechanisms for defect densities in GaN using one-or two-step epitaxial lateral overgrowth methods P Vennéguès, B Beaumont, V Bousquet, M Vaille, P Gibart Journal of Applied Physics 87 (9), 4175-4181, 2000 | 236 | 2000 |
| InGaN multiple quantum well laser diodes grown by molecular beam epitaxy SE Hooper, M Kauer, V Bousquet, K Johnson, JM Barnes, J Heffernan Electronics Letters 40 (1), 1, 2004 | 66 | 2004 |
| A Two‐Step Method for Epitaxial Lateral Overgrowth of GaN B Beaumont, V Bousquet, P Vennéguès, M Vaille, A Bouillé, P Gibart, ... physica status solidi (a) 176 (1), 567-571, 1999 | 66 | 1999 |
| Light emitting diode with improved directionality TAN WeiSin, MJ Brockley, V Berryman-Bousquet US Patent App. 13/355,644, 2013 | 45 | 2013 |
| Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates V Bousquet, E Tournié, M Laügt, P Vennegues, JP Faurie Applied physics letters 70 (26), 3564-3566, 1997 | 44 | 1997 |
| Light emitting diode device TAN Wei-Sin, V Berryman-Bousquet, T Zhang, J Heffernan US Patent 8,258,524, 2012 | 41 | 2012 |
| Hetero-epitaxial growth of BexZn1− xSe on Si (0 0 1) and GaAs (0 0 1) substrates JP Faurie, V Bousquet, P Brunet, E Tournie Journal of crystal growth 184, 11-15, 1998 | 41 | 1998 |
| Simulations of ZnSeGaAs heteroepitaxial growth CH Grein, JP Faurie, V Bousquet, E Tournié, R Benedek, T De la Rubia Journal of crystal growth 178 (3), 258-267, 1997 | 40 | 1997 |
| Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy M Kauer, SE Hooper, V Bousquet, K Johnson, C Zellweger, JM Barnes, ... Electronics Letters 41 (13), 739-741, 2005 | 30 | 2005 |
| Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers V Bousquet, E Tournié, JP Faurie Journal of crystal growth 192 (1-2), 102-108, 1998 | 22 | 1998 |
| Active matrix QD‐LED with top emission structure by UV lithography for RGB patterning Y Nakanishi, T Takeshita, Y Qu, H Imabayashi, S Okamoto, H Utsumi, ... Journal of the Society for Information Display 28 (6), 499-508, 2020 | 20 | 2020 |
| High-power InGaN light emitting diodes grown by molecular beam epitaxy K Johnson, V Bousquet, SE Hooper, M Kauer, C Zellweger, J Heffernan Electronics Letters 40 (20), 1299-1300, 2004 | 20 | 2004 |
| Nitrides optoelectronic devices grown by molecular beam epitaxy M Kauer, V Bousquet, SE Hooper, JM Barnes, J Windle, WS Tan, ... physica status solidi (a) 204 (1), 221-226, 2007 | 19 | 2007 |
| A compact breath acetone analyser based on an ultraviolet light emitting diode J Li, TM Smeeton, M Zanola, J Barrett, V Berryman-Bousquet Sensors and Actuators B: Chemical 273, 76-82, 2018 | 18 | 2018 |
| Semiconductor layer structure V Bousquet, M Kauer, TAN Wei-Sin, J Heffernan, K Takahashi US Patent App. 12/741,217, 2010 | 18 | 2010 |
| Light emitting diode with patterned structures and method of making the same TAN Wei-Sin, AP Curd, V Berryman-Bousquet US Patent App. 13/176,872, 2013 | 17 | 2013 |
| InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy SE Hooper, M Kauer, V Bousquet, K Johnson, C Zellweger, J Heffernan Journal of crystal growth 278 (1-4), 361-366, 2005 | 17 | 2005 |
| Highly reflective GaN-based air-gap distributed Bragg reflectors fabricated using AlInN wet etching M Bellanger, V Bousquet, G Christmann, J Baumberg, M Kauer Applied Physics Express 2 (12), 121003, 2009 | 16 | 2009 |
| Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates M Benyoucef, M Kuball, B Beaumont, V Bousquet Applied physics letters 81 (13), 2370-2372, 2002 | 16 | 2002 |
| New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys C Chauvet, V Bousquet, E Tournié, JP Faurie Journal of Electronic Materials 28, 662-665, 1999 | 16 | 1999 |
