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Andrea Ghetti
Andrea Ghetti
Email verificata su micron.com
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Comprehensive analysis of random telegraph noise instability and its scaling in deca–nanometer flash memories
A Ghetti, CM Compagnoni, AS Spinelli, A Visconti
IEEE Transactions on Electron Devices 56 (8), 1746-1752, 2009
2512009
Strained Si, Ge, and Si 1− x Ge x alloys modeled with a first-principles-optimized full-zone k∙ p method
D Rideau, M Feraille, L Ciampolini, M Minondo, C Tavernier, H Jaouen, ...
Physical Review B 74 (19), 195208, 2006
1922006
Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy?
MA Alam, J Bude, A Ghetti
Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE …, 2000
1432000
The ballistic nano-transistor
G Timp, J Bude, KK Bourdelle, J Garno, A Ghetti, H Gossmann, M Green, ...
Electron Devices Meeting, 1999. IEDM'99. Technical Digest. International, 55-58, 1999
1411999
Scaling trends for random telegraph noise in deca-nanometer Flash memories
A Ghetti, CM Compagnoni, F Biancardi, AL Lacaita, S Beltrami, ...
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
922008
Tunneling into interface states as reliability monitor for ultrathin oxides
A Ghetti, E Sangiorgi, J Bude, TW Sorsch, G Weber
IEEE Transactions on Electron Devices 47 (12), 2358-2365, 2000
892000
Progress toward 10 nm CMOS devices
G Timp, KK Bourdelle, JE Bower, FH Baumann, T Boone, R Cirelli, ...
Electron Devices Meeting, 1998. IEDM'98. Technical Digest., International …, 1998
861998
First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming
CM Compagnoni, AS Spinelli, R Gusmeroli, AL Lacaita, S Beltrami, ...
Electron Devices Meeting, 2007. IEDM 2007. IEEE International, 165-168, 2007
812007
Gate oxide reliability projection to the sub-2 nm regime
BE Weir, MA Alam, JD Bude, PJ Silverman, A Ghetti, F Baumann, ...
Semiconductor Science and Technology 15 (5), 455, 2000
792000
Ultimate Accuracy for the nand Flash Program Algorithm Due to the Electron Injection Statistics
CM Compagnoni, AS Spinelli, R Gusmeroli, S Beltrami, A Ghetti, ...
IEEE Transactions on Electron Devices 55 (10), 2695-2702, 2008
732008
Gate oxides in 50 nm devices: Thickness uniformity improves projected reliability
BE Weir, PJ Silverman, MA Alam, F Baumann, D Monroe, A Ghetti, ...
Electron Devices Meeting, 1999. IEDM'99. Technical Digest. International …, 1999
691999
Characterization of tunneling current in ultra-thin gate oxide
A Ghetti, CT Liu, M Mastrapasqua, E Sangiorgi
Solid-State Electronics 44 (9), 1523-1531, 2000
682000
Giant random telegraph signals in nanoscale floating-gate devices
P Fantini, A Ghetti, A Marinoni, G Ghidini, A Visconti, A Marmiroli
IEEE Electron Device Letters 28 (12), 1114-1116, 2007
642007
Physical modeling of single-trap RTS statistical distribution in Flash memories
A Ghetti, M Bonanomi, CM Compagnoni, AS Spinelli, AL Lacaita, ...
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International, 610-615, 2008
592008
Low voltage tunneling in ultra-thin oxides: a monitor for interface states and degradation
A Ghetti, E Sangiorgi, J Bude, TW Sorsch, G Weber
Electron Devices Meeting, 1999. IEDM'99. Technical Digest. International …, 1999
481999
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state
SM Amoroso, CM Compagnoni, A Ghetti, L Gerrer, AS Spinelli, AL Lacaita, ...
IEEE Electron Device Letters 34 (5), 683-685, 2013
472013
Gate oxide reliability: Physical and computational models
A Ghetti
Predictive Simulation of Semiconductor Processing, 201-258, 2004
432004
Atomic migration in phase change materials
G Novielli, A Ghetti, E Varesi, A Mauri, R Sacco
Electron devices meeting (IEDM), 2013 IEEE international, 22.3. 1-22.3. 4, 2013
422013
Injection efficiency of CHISEL gate currents in short MOS devices: physical mechanisms, device implications, and sensitivity to technological parameters
D Esseni, L Selmi, A Ghetti, E Sangiorgi
IEEE Transactions on Electron Devices 47 (11), 2194-2200, 2000
422000
3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories
A Ghetti, L Bortesi, L Vendrame
Solid-state electronics 49 (11), 1805-1812, 2005
412005
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