Statistical model for random telegraph noise in Flash memories CM Compagnoni, R Gusmeroli, AS Spinelli, AL Lacaita, M Bonanomi, ...
IEEE Transactions on electron devices 55 (1), 388-395, 2007
145 2007 NiO as a test case for high resolution resonant inelastic soft x-ray scattering G Ghiringhelli, M Matsubara, C Dallera, F Fracassi, R Gusmeroli, ...
Journal of Physics: Condensed Matter 17 (35), 5397, 2005
104 2005 First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming CM Compagnoni, AS Spinelli, R Gusmeroli, AL Lacaita, S Beltrami, ...
2007 IEEE International Electron Devices Meeting, 165-168, 2007
83 2007 Analytical Model for the Electron-Injection Statistics During Programming of Nanoscale nand Flash Memories CM Compagnoni, R Gusmeroli, AS Spinelli, A Visconti
IEEE transactions on electron devices 55 (11), 3192-3199, 2008
82 2008 Ultimate Accuracy for the nand Flash Program Algorithm Due to the Electron Injection Statistics CM Compagnoni, AS Spinelli, R Gusmeroli, S Beltrami, A Ghetti, ...
IEEE transactions on electron devices 55 (10), 2695-2702, 2008
78 2008 A multi-channel low-power IC for neural spike recording with data compression and narrowband 400-MHz MC-FSK wireless transmission A Bonfanti, M Ceravolo, G Zambra, R Gusmeroli, T Borghi, AS Spinelli, ...
2010 Proceedings of ESSCIRC, 330-333, 2010
48 2010 Defects spectroscopy in SiO2 by statistical random telegraph noise analysis R Gusmeroli, CM Compagnoni, A Riva, AS Spinelli, AL Lacaita, ...
2006 International Electron Devices Meeting, 1-4, 2006
47 2006 A simple method for efficient spike detection in multiunit recordings T Borghi, R Gusmeroli, AS Spinelli, G Baranauskas
Journal of neuroscience methods 163 (1), 176-180, 2007
45 2007 Investigation of the random telegraph noise instability in scaled Flash memory arrays AS Spinelli, CM Compagnoni, R Gusmeroli, M Ghidotti, A Visconti
Japanese journal of applied physics 47 (4S), 2598, 2008
42 2008 Comparison of modeling approaches for the capacitance–voltage and current–voltage characteristics of advanced gate stacks P Palestri, N Barin, D Brunel, C Busseret, A Campera, PA Childs, ...
IEEE Transactions on Electron Devices 54 (1), 106-114, 2006
41 2006 A multi-channel low-power system-on-chip for single-unit recording and narrowband wireless transmission of neural signal A Bonfanti, M Ceravolo, G Zambra, R Gusmeroli, AS Spinelli, AL Lacaita, ...
2010 Annual International Conference of the IEEE Engineering in Medicine and …, 2010
31 2010 A compact multichannel system for acquisition and processing of neural signals T Borghi, A Bonfanti, G Zambra, R Gusmeroli, AS Spinelli, G Baranauskas
2007 29th Annual International Conference of the IEEE Engineering in …, 2007
30 2007 A power-efficient analog integrated circuit for amplification and detection of neural signals T Borghi, A Bonfanti, R Gusmeroli, G Zambra, AS Spinelli
2008 30th Annual International Conference of the IEEE Engineering in …, 2008
28 2008 Silicon nanocrystal memories: A status update CM Compagnoni, R Gusmeroli, D Ielmini, AS Spinelli, AL Lacaita
Journal of Nanoscience and Nanotechnology 7 (1), 193-205, 2007
27 2007 Statistical investigation of random telegraph noise ID instabilities in Flash cells at different initial trap-filling conditions CM Compagnoni, R Gusmeroli, AS Spinelli, AL Lacaita, M Bonanomi, ...
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
26 2007 Valence of under pressure: A resonant inelastic x-ray emission study E Annese, JP Rueff, G Vankó, M Grioni, L Braicovich, L Degiorgi, ...
Physical Review B—Condensed Matter and Materials Physics 70 (7), 075117, 2004
24 2004 A low-power integrated circuit for analog spike detection and sorting in neural prosthesis systems A Bonfanti, T Borghi, R Gusmeroli, G Zambra, A Oliyink, L Fadiga, ...
2008 IEEE Biomedical Circuits and Systems Conference, 257-260, 2008
23 2008 RTN Instability From the Stationary Trap-Filling Condition: An Analytical Spectroscopic Investigation CM Compagnoni, R Gusmeroli, AS Spinelli, A Visconti
IEEE transactions on electron devices 55 (2), 655-661, 2008
21 2008 Intermediate valence behaviour under pressure: how precisely can we probe it by means ofresonant inelastic x-ray emission? C Dallera, E Annese, JP Rueff, M Grioni, G Vanko, L Braicovich, A Barla, ...
Journal of Physics: Condensed Matter 17 (11), S849, 2005
21 2005 2D QM simulation and optimization of decanano non-overlapped MOS devices R Gusmeroli, AS Spinelli, A Pirovano, AL Lacaita, F Boeuf, T Skotnicki
IEEE International Electron Devices Meeting 2003, 9.1. 1-9.1. 4, 2003
21 2003