Slawomir Kret
Citata da
Citata da
The Peak Pairs algorithm for strain mapping from HRTEM images
PL Galindo, S Kret, AM Sanchez, JY Laval, A Yanez, J Pizarro, E Guerrero, ...
Ultramicroscopy 107 (12), 1186-1193, 2007
Extracting quantitative information from high resolution electron microscopy
S Kret, P Ruterana, A Rosenauer, D Gerthsen
physica status solidi (b) 227 (1), 247-295, 2001
Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers
P Ruterana, S Kret, A Vivet, G Maciejewski, P Dluzewski
Journal of applied physics 91 (11), 8979-8985, 2002
ZnTe nanowires grown on GaAs (100) substrates by molecular beam epitaxy
E Janik, J Sadowski, P Dłużewski, S Kret, LT Baczewski, A Petroutchik, ...
Applied physics letters 89 (13), 133114, 2006
Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si (111) substrate
A Wierzbicka, ZR Zytkiewicz, S Kret, J Borysiuk, P Dluzewski, M Sobanska, ...
Nanotechnology 24 (3), 035703, 2012
Catalytic growth of ZnTe nanowires by molecular beam epitaxy: structural studies
E Janik, P Dłużewski, S Kret, A Presz, H Kirmse, W Neumann, ...
Nanotechnology 18 (47), 475606, 2007
High resolution electron microscope analysis of lattice distortions and In segregation in highly strained coherent islands grown on GaAs (001)
S Kret, T Benabbas, C Delamarre, Y Androussi, A Dubon, JY Laval, ...
Journal of applied physics 86 (4), 1988-1993, 1999
Structural and optical evidence of island correlation in CdTe/ZnTe superlattices
S Maćkowski, G Karczewski, T Wojtowicz, J Kossut, S Kret, ...
Applied Physics Letters 78 (24), 3884-3886, 2001
GaAs: Mn nanowires grown by molecular beam epitaxy of (Ga, Mn) As at MnAs segregation conditions
J Sadowski, P Dłużewski, S Kret, E Janik, E Łusakowska, J Kanski, ...
Nano letters 7 (9), 2724-2728, 2007
Giant spin splitting in optically active ZnMnTe/ZnMgTe core/shell nanowires
P Wojnar, E Janik, LT Baczewski, S Kret, E Dynowska, T Wojciechowski, ...
Nano letters 12 (7), 3404-3409, 2012
An approach to the systematic distortion correction in aberration‐corrected HAADF images
AM Sanchez, PL Galindo, S Kret, M Falke, R Beanland, PJ Goodhew
Journal of microscopy 221 (1), 1-7, 2006
Natural quantum dots in the wetting layer
A Babiński, J Borysiuk, S Kret, M Czyż, A Golnik, S Raymond, ...
Applied Physics Letters 92 (17), 171104, 2008
ZnTe–ZnO core–shell radial heterostructures grown by the combination of molecular beam epitaxy and atomic layer deposition
E Janik, A Wachnicka, E Guziewicz, M Godlewski, S Kret, W Zaleszczyk, ...
Nanotechnology 21 (1), 015302, 2009
Nonlinear FE analysis of residual stresses induced by dislocations in heterostructures
P Dłużewski, G Maciejewski, G Jurczak, S Kret, JY Laval
Computational materials science 29 (3), 379-395, 2004
Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy
M Zielinski, M Portail, S Roy, T Chassagne, C Moisson, S Kret, Y Cordier
Materials Science and Engineering: B 165 (1-2), 9-14, 2009
Atomic-scale mapping of local lattice distortions in highly strained coherent islands of InxGa1-xAs/GaAs by high-resolution electron microscopy and image processing
S Kret, C Delamarre, JY Laval, A Dubon
Philosophical magazine letters 77 (5), 249-256, 1998
All-wurtzite (In, Ga) As-(Ga, Mn) As core–shell nanowires grown by molecular beam epitaxy
A Siusys, J Sadowski, M Sawicki, S Kret, T Wojciechowski, K Gas, ...
Nano letters 14 (8), 4263-4272, 2014
Measurement of dislocation core distribution by digital processing of high-resolution transmission electron microscopy micrographs: a new technique for studying defects
S Kret, P Dlużewski, E Sobczak
Journal of Physics: Condensed Matter 12 (49), 10313, 2000
Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy
M Sobanska, K Klosek, J Borysiuk, S Kret, G Tchutchulasvili, ...
Journal of Applied Physics 115 (4), 043517, 2014
MBE growth and properties of ZnTe-and CdTe-based nanowires
T Wojtowicz, E Janik, W Zaleszczyk, J Sadowski, G Karczewski, ...
Journal of the Korean Physical Society 53 (5), 3055-3063, 2008
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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