Surface‐plasmon‐enhanced light‐emitting diodes MK Kwon, JY Kim, BH Kim, IK Park, CY Cho, CC Byeon, SJ Park Advanced Materials 20 (7), 1253-1257, 2008 | 567 | 2008 |
Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes SH Han, DY Lee, SJ Lee, CY Cho, MK Kwon, SP Lee, DY Noh, DJ Kim, ... Applied Physics Letters 94 (23), 2009 | 369 | 2009 |
Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes G Jo, M Choe, CY Cho, JH Kim, W Park, S Lee, WK Hong, TW Kim, ... Nanotechnology 21 (17), 175201, 2010 | 356 | 2010 |
AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% E Cicek, R McClintock, CY Cho, B Rahnema, M Razeghi Applied Physics Letters 103 (19), 2013 | 169 | 2013 |
Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles CY Cho, SJ Lee, JH Song, SH Hong, SM Lee, YH Cho, SJ Park Applied Physics Letters 98 (5), 2011 | 159 | 2011 |
Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN CY Cho, MK Kwon, SJ Lee, SH Han, JW Kang, SE Kang, DY Lee, SJ Park Nanotechnology 21 (20), 205201, 2010 | 111 | 2010 |
Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) CY Cho, Y Zhang, E Cicek, B Rahnema, Y Bai, R McClintock, M Razeghi Applied Physics Letters 102 (21), 2013 | 90 | 2013 |
Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN CY Cho, KS Kim, SJ Lee, MK Kwon, H Ko, ST Kim, GY Jung, SJ Park Applied Physics Letters 99 (4), 2011 | 86 | 2011 |
Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes SH Han, CY Cho, SJ Lee, TY Park, TH Kim, SH Park, S Won Kang, ... Applied Physics Letters 96 (5), 2010 | 83 | 2010 |
Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells IK Park, JY Kim, MK Kwon, CY Cho, JH Lim, SJ Park Applied Physics Letters 92 (9), 2008 | 75 | 2008 |
Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si (111) Y Zhang, S Gautier, CY Cho, E Cicek, Z Vashaei, R McClintock, C Bayram, ... Applied Physics Letters 102 (1), 2013 | 67 | 2013 |
Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells SH Han, DY Lee, HW Shim, GC Kim, YS Kim, ST Kim, SJ Lee, CY Cho, ... Journal of Physics D: Applied Physics 43 (35), 354004, 2010 | 61 | 2010 |
Effect of InGaN quantum dot size on the recombination process in light-emitting diodes IK Park, MK Kwon, CY Cho, JY Kim, CH Cho, SJ Park Applied Physics Letters 92 (25), 2008 | 59 | 2008 |
Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices M Choe, CY Cho, JP Shim, W Park, SK Lim, WK Hong, B Hun Lee, ... Applied Physics Letters 101 (3), 2012 | 57 | 2012 |
AlxGa1− xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate E Cicek, R McClintock, CY Cho, B Rahnema, M Razeghi Applied Physics Letters 103 (18), 2013 | 56 | 2013 |
Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles SH Hong, CY Cho, SJ Lee, SY Yim, W Lim, ST Kim, SJ Park Optics express 21 (3), 3138-3144, 2013 | 52 | 2013 |
InGaN∕ GaN multiple quantum wells grown on microfacets for white-light generation CY Cho, IK Park, MK Kwon, JY Kim, SJ Park, DR Jung, KW Kwon Applied Physics Letters 93 (24), 2008 | 52 | 2008 |
Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy E Cicek, R McClintock, Z Vashaei, Y Zhang, S Gautier, CY Cho, ... Applied Physics Letters 102 (5), 2013 | 45 | 2013 |
High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask CY Cho, MK Kwon, IK Park, SH Hong, JJ Kim, SE Park, ST Kim, SJ Park Optics Express 19 (104), A943-A948, 2011 | 39 | 2011 |
Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition SJ Lee, SH Han, CY Cho, SP Lee, DY Noh, HW Shim, YC Kim, SJ Park Journal of Physics D: Applied Physics 44 (10), 105101, 2011 | 38 | 2011 |