| Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals L Marona, P Wisniewski, P Prystawko, I Grzegory, T Suski, S Porowski, ... Applied physics letters 88 (20), 2006 | 100 | 2006 |
| Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes S Grzanka, G Franssen, G Targowski, K Krowicki, T Suski, R Czernecki, ... Applied Physics Letters 90 (10), 2007 | 70 | 2007 |
| A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN P Kamyczek, E Placzek-Popko, V Kolkovsky, S Grzanka, R Czernecki Journal of Applied Physics 111 (11), 2012 | 66 | 2012 |
| Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy M Leszczynski, R Czernecki, S Krukowski, M Krysko, G Targowski, ... Journal of crystal growth 318 (1), 496-499, 2011 | 57 | 2011 |
| Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance J Pereiro, C Rivera, Á Navarro, E Muñoz, R Czernecki, S Grzanka, ... IEEE journal of quantum electronics 45 (6), 617-622, 2009 | 54 | 2009 |
| Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates M Kryśko, G Franssen, T Suski, M Albrecht, B Łucznik, I Grzegory, ... Applied Physics Letters 91 (21), 2007 | 54 | 2007 |
| Elimination of trench defects and V-pits from InGaN/GaN structures J Smalc-Koziorowska, E Grzanka, R Czernecki, D Schiavon, ... Applied Physics Letters 106 (10), 2015 | 52 | 2015 |
| Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers M Sarzynski, M Leszczynski, M Krysko, JZ Domagala, R Czernecki, ... Crystal Research and Technology 47 (3), 321-328, 2012 | 48 | 2012 |
| Cavity suppression in nitride based superluminescent diodes A Kafar, S Stańczyk, S Grzanka, R Czernecki, M Leszczyński, T Suski, ... Journal of Applied Physics 111 (8), 2012 | 45 | 2012 |
| InGaN laser diode mini-arrays P Perlin, L Marona, K Holc, P Wisniewski, T Suski, M Leszczynski, ... Applied physics express 4 (6), 062103, 2011 | 45 | 2011 |
| Graded-index separate confinement heterostructure InGaN laser diodes S Stańczyk, T Czyszanowski, A Kafar, J Goss, S Grzanka, E Grzanka, ... Applied Physics Letters 103 (26), 2013 | 44 | 2013 |
| Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy T Suski, E Litwin-Staszewska, R Piotrzkowski, R Czernecki, M Krysko, ... Applied Physics Letters 93 (17), 2008 | 43 | 2008 |
| Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ... Applied Physics Letters 95 (26), 2009 | 41 | 2009 |
| Anomalous temperature characteristics of single wide quantum well InGaN laser diode T Świetlik, G Franssen, P Wiśniewski, S Krukowski, SP Łepkowski, ... Applied physics letters 88 (7), 2006 | 38 | 2006 |
| Search for free holes in InN: Mg-interplay between surface layer and Mg-acceptor doped interior LH Dmowski, M Baj, T Suski, J Przybytek, R Czernecki, X Wang, ... Journal of Applied Physics 105 (12), 2009 | 36 | 2009 |
| Elimination of AlGaN epilayer cracking by spatially patterned AlN mask M Sarzyński, M Kryśko, G Targowski, R Czernecki, A Sarzyńska, A Libura, ... Applied physics letters 88 (12), 2006 | 35 | 2006 |
| Control of Mg doping of GaN in RF-plasma molecular beam epitaxy A Feduniewicz, C Skierbiszewski, M Siekacz, ZR Wasilewski, I Sproule, ... Journal of crystal growth 278 (1-4), 443-448, 2005 | 35 | 2005 |
| Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕ GaN multiple quantum wells on bulk GaN substrates G Franssen, S Grzanka, R Czernecki, T Suski, L Marona, T Riemann, ... Journal of applied physics 97 (10), 2005 | 34 | 2005 |
| Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors I Gorczyca, A Kamińska, G Staszczak, R Czernecki, SP Łepkowski, ... Physical Review B 81 (23), 235206, 2010 | 33 | 2010 |
| Hydrogen diffusion in GaN: Mg and GaN: Si R Czernecki, E Grzanka, R Jakiela, S Grzanka, C Skierbiszewski, H Turski, ... Journal of Alloys and Compounds 747, 354-358, 2018 | 30 | 2018 |
Michał LeszczynskiEmail verificata su unipress.waw.pl
