Robert Czernecki
Robert Czernecki
Institue of High Pressure Physics PAS
Email verificata su unipress.waw.pl
Titolo
Citata da
Citata da
Anno
Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
L Marona, P Wisniewski, P Prystawko, I Grzegory, T Suski, S Porowski, ...
Applied physics letters 88 (20), 201111, 2006
972006
Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes
S Grzanka, G Franssen, G Targowski, K Krowicki, T Suski, R Czernecki, ...
Applied Physics Letters 90 (10), 103507, 2007
632007
A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN
P Kamyczek, E Placzek-Popko, V Kolkovsky, S Grzanka, R Czernecki
Journal of Applied Physics 111 (11), 113105, 2012
532012
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
M Kryśko, G Franssen, T Suski, M Albrecht, B Łucznik, I Grzegory, ...
Applied Physics Letters 91 (21), 211904, 2007
472007
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
M Leszczynski, R Czernecki, S Krukowski, M Krysko, G Targowski, ...
Journal of crystal growth 318 (1), 496-499, 2011
442011
Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance
J Pereiro, C Rivera, Navarro, E Muoz, R Czernecki, S Grzanka, ...
IEEE journal of quantum electronics 45 (6), 617-622, 2009
432009
InGaN laser diode mini-arrays
P Perlin, L Marona, K Holc, P Wisniewski, T Suski, M Leszczynski, ...
Applied physics express 4 (6), 062103, 2011
422011
Cavity suppression in nitride based superluminescent diodes
A Kafar, S Stańczyk, S Grzanka, R Czernecki, M Leszczyński, T Suski, ...
Journal of Applied Physics 111 (8), 083106, 2012
392012
Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy
T Suski, E Litwin-Staszewska, R Piotrzkowski, R Czernecki, M Krysko, ...
Applied Physics Letters 93 (17), 172117, 2008
392008
Graded-index separate confinement heterostructure InGaN laser diodes
S Stańczyk, T Czyszanowski, A Kafar, J Goss, S Grzanka, E Grzanka, ...
Applied Physics Letters 103 (26), 261107, 2013
372013
Elimination of trench defects and V-pits from InGaN/GaN structures
J Smalc-Koziorowska, E Grzanka, R Czernecki, D Schiavon, ...
Applied Physics Letters 106 (10), 101905, 2015
362015
Search for free holes in InN: Mg-interplay between surface layer and Mg-acceptor doped interior
LH Dmowski, M Baj, T Suski, J Przybytek, R Czernecki, X Wang, ...
Journal of Applied Physics 105 (12), 123713, 2009
352009
Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes
P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ...
Applied Physics Letters 95 (26), 261108, 2009
342009
Anomalous temperature characteristics of single wide quantum well InGaN laser diode
T Świetlik, G Franssen, P Wiśniewski, S Krukowski, SP Łepkowski, ...
Applied physics letters 88 (7), 071121, 2006
332006
Efficient radiative recombination and potential profile fluctuations in low-dislocation multiple quantum wells on bulk GaN substrates
G Franssen, S Grzanka, R Czernecki, T Suski, L Marona, T Riemann, ...
Journal of applied physics 97 (10), 103507, 2005
322005
Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers
M Sarzynski, M Leszczynski, M Krysko, JZ Domagala, R Czernecki, ...
Crystal Research and Technology 47 (3), 321-328, 2012
312012
Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
I Gorczyca, A Kamińska, G Staszczak, R Czernecki, SP Łepkowski, ...
Physical Review B 81 (23), 235206, 2010
312010
Elimination of AlGaN epilayer cracking by spatially patterned AlN mask
M Sarzyński, M Kryśko, G Targowski, R Czernecki, A Sarzyńska, A Libura, ...
Applied physics letters 88 (12), 121124, 2006
312006
Control of Mg doping of GaN in RF-plasma molecular beam epitaxy
A Feduniewicz, C Skierbiszewski, M Siekacz, ZR Wasilewski, I Sproule, ...
Journal of crystal growth 278 (1-4), 443-448, 2005
312005
Effect of efficiency “droop” in violet and blue InGaN laser diodes
S Grzanka, P Perlin, R Czernecki, L Marona, M Boćkowski, B Łucznik, ...
Applied Physics Letters 95 (7), 071108, 2009
292009
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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