Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell
IEEE Electron Device Letters 39 (4), 520-523, 2018
111 2018 A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges M Monavarian, A Rashidi, D Feezell
physica status solidi (a) 216 (1), 1800628, 2019
104 2019 High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ...
IEEE Photonics Technology Letters 29 (4), 381-384, 2017
76 2017 Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ...
Applied Physics Letters 112 (4), 2018
70 2018 Zero-phonon line and fine structure of the yellow luminescence band in GaN MA Reshchikov, JD McNamara, F Zhang, M Monavarian, A Usikov, ...
Physical Review B 94 (3), 035201, 2016
64 2016 Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors SM Mishkat-Ul-Masabih, AA Aragon, M Monavarian, TS Luk, DF Feezell
Applied Physics Express 12 (3), 036504, 2019
63 2019 Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ...
Journal of Applied Physics 122 (3), 2017
61 2017 Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ...
Acs Photonics 6 (7), 1618-1625, 2019
56 2019 Determination of carrier diffusion length in GaN S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür, S Metzner, ...
Journal of Applied Physics 117 (1), 2015
47 2015 Thermal quenching of the yellow luminescence in GaN MA Reshchikov, NM Albarakati, M Monavarian, V Avrutin, H Morkoç
Journal of Applied Physics 123 (16), 2018
44 2018 Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN S Mishkat-Ul-Masabih, TS Luk, A Rishinaramangalam, M Monavarian, ...
Applied Physics Letters 112 (4), 2018
42 2018 Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ...
Optics express 25 (16), 19343-19353, 2017
40 2017 Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics G Lheureux, M Monavarian, R Anderson, RA DeCrescent, J Bellessa, ...
Optics Express 28 (12), 17934-17943, 2020
36 2020 Trade-off between bandwidth and efficiency in semipolar (202¯ 1¯) InGaN/GaN single-and multiple-quantum-well light-emitting diodes M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ...
Applied Physics Letters 112 (19), 2018
33 2018 High-Voltage Regrown Nonpolar -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches M Monavarian, G Pickrell, AA Aragon, I Stricklin, MH Crawford, ...
IEEE Electron Device Letters 40 (3), 387-390, 2019
31 2019 Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells D Rosales, B Gil, T Bretagnon, B Guizal, F Zhang, S Okur, M Monavarian, ...
Journal of Applied Physics 115 (7), 2014
27 2014 Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements A Rashidi, M Monavarian, A Aragon, D Feezell
Scientific Reports 9 (1), 19921, 2019
24 2019 Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire MB Ullah, V Avrutin, SQ Li, S Das, M Monavarian, M Toporkov, Ü Özgür, ...
physica status solidi (RRL)–Rapid Research Letters 10 (9), 682-686, 2016
21 2016 Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers F Zhang, N Can, S Hafiz, M Monavarian, S Das, V Avrutin, Ü Özgür, ...
Applied Physics Letters 106 (18), 2015
19 2015 Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder KS Qwah, M Monavarian, G Lheureux, J Wang, YR Wu, JS Speck
Applied Physics Letters 117 (2), 2020
18 2020