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Quentin Rafhay
Quentin Rafhay
Université Grenoble Alpes
Verified email at phelma.grenoble-inp.fr
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Cited by
Year
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...
IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015
2242015
Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs
A Tsormpatzoglou, CA Dimitriadis, R Clerc, Q Rafhay, G Pananakakis, ...
IEEE Transactions on Electron devices 54 (8), 1943-1952, 2007
1172007
Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses
D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ...
2014 IEEE international electron devices meeting, 28.4. 1-28.4. 4, 2014
902014
Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs
Q Rafhay, R Clerc, G Ghibaudo, G Pananakakis
Solid-State Electronics 52 (10), 1474-1481, 2008
442008
Effects of the pH on the formation and doping mechanisms of ZnO nanowires using aluminum nitrate and ammonia
C Verrier, E Appert, O Chaix-Pluchery, L Rapenne, Q Rafhay, ...
Inorganic Chemistry 56 (21), 13111-13122, 2017
392017
New Y-function based MOSFET parameter extraction method from weak to strong inversion range
JB Henry, Q Rafhay, A Cros, G Ghibaudo
Solid-State Electronics 123, 84-88, 2016
372016
Tunable morphology and doping of ZnO nanowires by chemical bath deposition using aluminum nitrate
C Verrier, E Appert, O Chaix-Pluchery, L Rapenne, Q Rafhay, ...
The Journal of Physical Chemistry C 121 (6), 3573-3583, 2017
342017
Resistive memory variability: A simplified trap-assisted tunneling model
D Garbin, E Vianello, Q Rafhay, M Azzaz, P Candelier, B DeSalvo, ...
Solid-State Electronics 115, 126-132, 2016
332016
New parameter extraction method based on split C–V measurements in FDSOI MOSFETs
IB Akkez, A Cros, C Fenouillet-Beranger, F Boeuf, Q Rafhay, F Balestra, ...
Solid-state electronics 84, 142-146, 2013
312013
Conventional technological boosters for injection velocity in ultrathin-body MOSFETs
M Ferrier, R Clerc, L Lucci, Q Rafhay, G Pananakakis, G Ghibaudo, ...
IEEE transactions on Nanotechnology 6 (6), 613-621, 2007
262007
Refined conformal mapping model for MOSFET parasitic capacitances based on elliptic integrals
G Hiblot, Q Rafhay, F Boeuf, G Ghibaudo
IEEE Transactions on Electron Devices 62 (3), 972-979, 2015
242015
Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations
V Maryasin, D Bucci, Q Rafhay, F Panicco, J Michallon, ...
Solar Energy Materials and Solar Cells 172, 314-323, 2017
232017
On the accuracy of current TCAD hot carrier injection models in nanoscale devices
A Zaka, Q Rafhay, M Iellina, P Palestri, R Clerc, D Rideau, D Garetto, ...
Solid-state electronics 54 (12), 1669-1674, 2010
232010
Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials
Q Rafhay, R Clerc, M Ferrier, G Pananakakis, G Ghibaudo
Solid-State Electronics 52 (4), 540-547, 2008
222008
High performance CMOS FDSOI devices activated at low temperature
L Pasini, P Batude, J Lacord, M Casse, B Mathieu, B Sklenard, FP Luce, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
212016
On the impact of OxRAM-based synapses variability on convolutional neural networks performance
D Garbin, E Vianello, O Bichler, M Azzaz, Q Rafhay, P Candelier, ...
Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale …, 2015
212015
Integration of LaMnO3+ δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD
R Rodriguez-Lamas, D Pla, O Chaix-Pluchery, B Meunier, F Wilhelm, ...
Beilstein Journal of Nanotechnology 10 (1), 389-398, 2019
202019
Endurance statistical behavior of resistive memories based on experimental and theoretical investigation
DA Robayo, G Sassine, Q Rafhay, G Ghibaudo, G Molas, E Nowak
IEEE Transactions on Electron Devices 66 (8), 3318-3325, 2019
192019
Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network
D Garbin, Q Rafhay, E Vianello, S Jeannot, P Candelier, B DeSalvo, ...
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
182015
Accurate boundary condition for short-channel effect compact modeling in MOS devices
G Hiblot, T Dutta, Q Rafhay, J Lacord, M Akbal, F Boeuf, G Ghibaudo
IEEE Transactions on Electron Devices 62 (1), 28-35, 2014
182014
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