Segui
Ted Liang
Titolo
Citata da
Citata da
Anno
Advanced photolithographic mask repair using electron beams
T Liang, E Frendberg, B Lieberman, A Stivers
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2005
972005
Progress in extreme ultraviolet mask repair using a focused ion beam
T Liang, A Stivers, R Livengood, PY Yan, G Zhang, FC Lo
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2000
782000
EUV progress toward HVM readiness
B Turkot, SL Carson, A Lio, T Liang, M Phillips, B McCool, E Stenehjem, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 9-17, 2016
702016
EUVL defect printability at the 32-nm node
EM Gullikson, E Tejnil, T Liang, AR Stivers
Emerging Lithographic Technologies VIII 5374, 791-796, 2004
582004
TaN EUVL mask fabrication and characterization
P Yan, G Zhang, A Ma, T Liang
Emerging Lithographic Technologies V 4343, 409-414, 2001
572001
Damage-free mask repair using electron-beam-induced chemical reactions
T Liang, AR Stivers
Emerging Lithographic Technologies VI 4688, 375-384, 2002
562002
Inhibiting spontaneous etching of nanoscale electron beam induced etching features: Solutions for nanoscale repair of extreme ultraviolet lithography masks
MG Lassiter, T Liang, PD Rack
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2008
532008
Method of repairing an opaque defect on a mask with electron beam-induced chemical etching
T Liang, A Stivers
US Patent 6,897,157, 2005
502005
EUV mask absorber characterization and selection
P Yan, G Zhang, P Kofron, JE Powers, M Tran, T Liang, AR Stivers, FC Lo
Photomask and Next-Generation Lithography Mask Technology VII 4066, 116-123, 2000
492000
Methods for repairing an alternating phase-shift mask
T Liang
US Patent App. 11/028,818, 2006
432006
Evaluation of the capability of a multibeam confocal inspection system for inspection of EUVL mask blanks
AR Stivers, T Liang, MJ Penn, B Lieberman, GV Shelden, JA Folta, ...
22nd Annual BACUS Symposium on Photomask Technology 4889, 408-417, 2002
412002
EUV substrate and blank inspection with confocal microscopy
JP Urbach, JFW Cavelaars, H Kusunose, T Liang, AR Stivers
23rd Annual BACUS Symposium on Photomask Technology 5256, 556-565, 2003
402003
Enhanced optical inspectability of patterned EUVL mask
T Liang, AR Stivers, P Yan, E Tejnil, G Zhang
21st Annual BACUS Symposium on Photomask Technology 4562, 288-296, 2002
372002
Enhanced inspection of extreme ultraviolet mask
PY Yan, T Liang, G Zhang
US Patent 6,720,118, 2004
332004
Demonstration of damage-free mask repair using electron beam-induced processes
T Liang, AR Stivers, M Penn, D Bald, C Sethi, V Boegli, M Budach, ...
Photomask and Next-Generation Lithography Mask Technology XI 5446, 291-300, 2004
322004
Helium ion microscope invasiveness and imaging study for semiconductor applications
RH Livengood, Y Greenzweig, T Liang, M Grumski
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2007
312007
Chemical effect of dry and wet cleaning of the Ru protective layer of the extreme ultraviolet lithography reflector
L Belau, JY Park, T Liang, H Seo, GA Somorjai
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2009
302009
Exposing extreme ultraviolet lithography at Intel
J Roberts, T Bacuita, RL Bristol, H Cao, M Chandhok, SH Lee, M Leeson, ...
Microelectronic engineering 83 (4-9), 672-675, 2006
302006
EUV mask pattern defect printability
T Liang, G Zhang, P Naulleau, A Myers, SJ Park, A Stivers, G Vandentop
Photomask and Next-Generation Lithography Mask Technology XIII 6283, 122-133, 2006
272006
Inspection of EUV reticles
DW Pettibone, A Veldman, T Liang, AR Stivers, PJS Mangat, B Lu, ...
Emerging Lithographic Technologies VI 4688, 363-374, 2002
272002
Il sistema al momento non pu˛ eseguire l'operazione. Riprova pi¨ tardi.
Articoli 1–20