Boyan Boyanov
Boyan Boyanov
Email verificata su illumina.com - Home page
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Citata da
Citata da
Anno
Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout
B Doyle, B Boyanov, S Datta, M Doczy, S Hareland, B Jin, J Kavalieros, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No…, 2003
3512003
Method of making a semiconductor transistor
AS Murthy, B Boyanov, R Soman, RS Chau
US Patent 6,812,086, 2004
1142004
Transistor gate electrode having conductor material layer
A Murthy, B Boyanov, S Datta, BS Doyle, BY Jin, S Yu, R Chau
US Patent 7,223,679, 2007
1122007
Strained transistor integration for CMOS
B Boyanov, A Murthy, BS Doyle, R Chau
US Patent 7,662,689, 2010
1032010
Method for improving transistor performance through reducing the salicide interface resistance
A Murthy, B Boyanov, GA Glass, T Hoffmann
US Patent 6,949,482, 2005
1002005
Re-investigation of titanium silicalite by X-ray absorption spectroscopy: are the novel titanium sites real?
S Pei, GW Zajac, JA Kaduk, J Faber, BI Boyanov, D Duck, D Fazzini, ...
Catalysis letters 21 (3-4), 333-344, 1993
981993
Double-gate transistor with enhanced carrier mobility
B Boyanov, B Doyle, J Kavalieros, A Murthy, R Chau
US Patent 6,974,733, 2005
882005
Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
A Murthy, R Soman, B Boyanov
US Patent 6,723,622, 2004
772004
Silicon nano-transistors for logic applications
R Chau, B Boyanov, B Doyle, M Doczy, S Datta, S Hareland, B Jin, ...
Physica E: Low-dimensional systems and nanostructures 19 (1-2), 1-5, 2003
732003
Estimation of measurement uncertainties in XAFS data
M Newville, BI Boyanov, DE Sayers
Journal of synchrotron radiation 6 (3), 264-265, 1999
581999
X-ray photoelectron spectroscopy measurement of the Schottky barrier at the SiC (N)/Cu interface
SW King, M French, M Jaehnig, M Kuhn, B Boyanov, B French
Journal of Vacuum Science & Technology B, Nanotechnology and…, 2011
552011
Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
A Murthy, R Soman, B Boyanov
US Patent App. 10/448,817, 2003
532003
Dielectric spacers for metal interconnects and method to form the same
JD Bielefeld, B Boyanov
US Patent 7,772,702, 2010
402010
Reducing internal film stress in dielectric film
G Kloster, B Boyanov, M Goodner, M Moinpour, M Haverty
US Patent App. 11/096,678, 2006
392006
Method for improving transistor performance through reducing the salicide interface resistance
A Murthy, B Boyanov, GA Glass, T Hoffmann
US Patent 7,274,055, 2007
382007
Fabricating strained channel epitaxial source/drain transistors
A Murthy, JK Brask, AN Westmeyer, B Boyanov, N Lindert
US Patent 7,226,842, 2007
382007
Forming a porous dielectric layer and structures formed thereby
B Boyanov, GM Kloster, V Ramachandrarao, HM Park
US Patent 7,179,755, 2007
382007
Concentrated DNA rheology and microrheology
TG Mason, A Dhople, D Wirtz
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 463, 153-160, 1997
36*1997
Film thickness effects in the solid phase reaction
BI Boyanov, PT Goeller, DE Sayers, RJ Nemanich
Journal of applied physics 84 (8), 4285-4291, 1998
341998
Dielectric spacers for metal interconnects and method to form the same
MA Hussein, B Boyanov
US Patent 7,649,239, 2010
312010
Il sistema al momento non pu eseguire l'operazione. Riprova pi tardi.
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