| New method for determining flat-band voltage in high mobility semiconductors R Winter, J Ahn, PC McIntyre, M Eizenberg Journal of Vacuum Science & Technology B 31 (3), 2013 | 120 | 2013 |
| Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors A Shriki, R Winter, Y Calahorra, Y Kauffmann, G Ankonina, M Eizenberg, ... Journal of applied physics 121 (6), 2017 | 34 | 2017 |
| Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions I Krylov, R Winter, D Ritter, M Eizenberg Applied Physics Letters 104 (24), 2014 | 28 | 2014 |
| Border trap reduction in Al2O3/InGaAs gate stacks K Tang, R Winter, L Zhang, R Droopad, M Eizenberg, PC McIntyre Applied Physics Letters 107 (20), 2015 | 25 | 2015 |
| The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes R Tang-Kong, R Winter, R Brock, J Tracy, M Eizenberg, RH Dauskardt, ... ACS applied materials & interfaces 10 (43), 37103-37109, 2018 | 22 | 2018 |
| Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface R Winter, P Shekhter, K Tang, L Floreano, A Verdini, PC McIntyre, ... ACS Applied Materials & Interfaces 8 (26), 16979-16984, 2016 | 21 | 2016 |
| The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack R Winter, I Krylov, J Ahn, PC McIntyre, M Eizenberg Applied Physics Letters 104 (20), 2014 | 16 | 2014 |
| Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing R Winter, I Krylov, C Cytermann, K Tang, J Ahn, PC McIntyre, M Eizenberg Journal of Applied Physics 118 (5), 2015 | 12 | 2015 |
| The asymmetric band structure and electrical behavior of the GdScO3/GaN system S Iacopetti, P Shekhter, R Winter, TCU Tromm, J Schubert, M Eizenberg Journal of applied physics 121 (20), 2017 | 9 | 2017 |
| Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks F Palumbo, S Pazos, F Aguirre, R Winter, I Krylov, M Eizenberg Solid-State Electronics 132, 12-18, 2017 | 6 | 2017 |
| Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks F Aguirre, S Pazos, FRM Palumbo, S Fadida, R Winter, M Eizenberg Journal of Applied Physics 123 (13), 2018 | 5 | 2018 |
| Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks F Palumbo, R Winter, I Krylov, M Eizenberg Applied Physics Letters 104 (25), 2014 | 5 | 2014 |
| Tailoring Al-SiO2 interfacial work function using an organophosphonate nanolayer M Kwan, R Winter, PH Mutin, M Eizenberg, G Ramanath Applied Physics Letters 111 (12), 2017 | 4 | 2017 |
| Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors F Palumbo, R Winter, K Tang, PC McIntyre, M Eizenberg Journal of Applied Physics 121 (17), 2017 | 4 | 2017 |
| Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs F Palumbo, FL Aguirre, SM Pazos, I Krylov, R Winter, M Eizenberg Solid-State Electronics 149, 71-77, 2018 | 2 | 2018 |
| Chemical bonding and nanomolecular length effects on work function at Au-organophosphonate-HfO2 interfaces R Winter, M Kwan, PH Mutin, G Ramanath, M Eizenberg Applied Physics Letters 110 (18), 2017 | 2 | 2017 |
| Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks FL Aguirre, SM Pazos, F Palumbo, S Fadida, R Winter, M Eizenberg 2018 IEEE International Reliability Physics Symposium (IRPS), P-GD. 3-1-P-GD …, 2018 | 1 | 2018 |
| Border trap reduction in Al {sub 2} O {sub 3}/InGaAs gate stacks K Tang, PC McIntyre, R Winter, M Eizenberg, L Zhang, R Droopad Applied Physics Letters 107 (20), 2015 | | 2015 |
| Paper EM+ NS+ PS-MoM3 Border Trap Analysis and Reduction for ALD High-k InGaAs Gate Stacks K Tang, R Winter, T Kent, M Negara, R Droopad, AC Kummel, ... | | |
Moshe EizenbergTechnion and Guangdong Technion- Israel Institute of TechnologyVerified email at technion.ac.il
